| ID | 113928 |
| Author | |
| Keywords | A3. Molecular beam epitaxy
A1. Sublattice reversal
B2. GaAs/Ge/GaAs
B2. AlAs/Ge/AlAs
A1. Heterostructures
B2. (1 1 3)A and (1 1 3)B GaAs
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| Content Type |
Journal Article
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| Description | GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with that for reference (113)B and (113)A GaAs substrates. Sublattice reversal in GaAs/Ge/GaAs heterostructures was achieved on (113)B GaAs substrate. On the other hand, sublattice reversal on (113)A GaAs substrate was obtained by using AlAs/Ge/AlAs heterostructures.
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| Journal Title |
Journal of Crystal Growth
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| ISSN | 00220248
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| NCID | AA00696341
AA11531784
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| Publisher | Elsevier
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| Volume | 512
|
| Start Page | 74
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| End Page | 77
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| Published Date | 2019-02-06
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| Rights | © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
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| EDB ID | |
| DOI (Published Version) | |
| URL ( Publisher's Version ) | |
| FullText File | |
| language |
eng
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| TextVersion |
Author
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| departments |
Science and Technology
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