Development of device isolation technologies for GaN-based field-effect transistors
Total for the last 12 months
number of access : ? 件
number of downloads : ?
Use this link to cite this item : https://repo.lib.tokushima-u.ac.jp/109494
| ID | 109494 |
| Title Alternative | 窒化ガリウムトランジスタにおける素子間分離技術の研究
|
| Author |
Jiang, Ying
|
| Keywords | Gallium nitride
device isolation
field isolation
AlGaN/GaN HFET
GaN MOSFET
|
| Content Type |
Thesis or Dissertation
|
| Published Date | 2015-09-10
|
| Remark | 内容要旨・審査要旨・論文本文の公開:
内容要旨・審査要旨 : LID201510231001.pdf 論文本文 : LID201602081001.pdf |
| FullText File | |
| language |
eng
|
| TextVersion |
ETD
|
| MEXT report number | 甲第2875号
|
| Diploma Number | 甲先第228号
|
| Granted Date | 2015-09-10
|
| Degree Name |
Doctor of Engineering
|
| Grantor |
Tokushima University
|
