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ID 110896
著者
O, Ryong-Sok NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation|University of Tokushima
Takamura, Makoto NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Furukawa, Kazuaki NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
日比野, 浩樹 NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
資料タイプ
学術雑誌論文
抄録
We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5µm/h under UV light irradiation in 1wt% KOH at a constant current of 0.5mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA11509854
AA12295836
出版者
The Japan Society of Applied Physics
54
3
開始ページ
036502
発行日
2015-01-30
備考
© 2015 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
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言語
eng
著者版フラグ
著者版
部局
理工学系