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ID 113928
著者
南, 康夫 Tokushima University
キーワード
A3. Molecular beam epitaxy
A1. Sublattice reversal
B2. GaAs/Ge/GaAs
B2. AlAs/Ge/AlAs
A1. Heterostructures
B2. (1 1 3)A and (1 1 3)B GaAs
資料タイプ
学術雑誌論文
抄録
GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with that for reference (113)B and (113)A GaAs substrates. Sublattice reversal in GaAs/Ge/GaAs heterostructures was achieved on (113)B GaAs substrate. On the other hand, sublattice reversal on (113)A GaAs substrate was obtained by using AlAs/Ge/AlAs heterostructures.
掲載誌名
Journal of Crystal Growth
ISSN
00220248
cat書誌ID
AA00696341
AA11531784
出版者
Elsevier
512
開始ページ
74
終了ページ
77
発行日
2019-02-06
権利情報
© 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系