Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3)A and (1 1 3)B GaAs substrates

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Use this link to cite this item : https://repo.lib.tokushima-u.ac.jp/113928

ID	113928
Author	Lu, Xiangmeng Tokushima University KAKEN Search Researchers Minami, Yasuo Tokushima University Kitada, Takahiro Tokushima University KAKEN Search Researchers
Keywords	A3. Molecular beam epitaxy A1. Sublattice reversal B2. GaAs/Ge/GaAs B2. AlAs/Ge/AlAs A1. Heterostructures B2. (1 1 3)A and (1 1 3)B GaAs
Content Type	Journal Article
Description	GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with that for reference (113)B and (113)A GaAs substrates. Sublattice reversal in GaAs/Ge/GaAs heterostructures was achieved on (113)B GaAs substrate. On the other hand, sublattice reversal on (113)A GaAs substrate was obtained by using AlAs/Ge/AlAs heterostructures.
Journal Title	Journal of Crystal Growth
ISSN	00220248
NCID	AA00696341 AA11531784
Publisher	Elsevier
Volume	512
Start Page	74
End Page	77
Published Date	2019-02-06
Rights	© 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
EDB ID	349464
DOI (Published Version)	10.1016/j.jcrysgro.2019.02.010
URL ( Publisher's Version )	https://doi.org/10.1016/j.jcrysgro.2019.02.010
FullText File	crysgro_512_74.pdf 722 KB
language	eng
TextVersion	Author
departments	Science and Technology