ID 110896
Author
O, Ryong-Sok NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation|University of Tokushima
Takamura, Makoto NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Furukawa, Kazuaki NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Hibino, Hiroki NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Content Type
Journal Article
Description
We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5µm/h under UV light irradiation in 1wt% KOH at a constant current of 0.5mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA11509854
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
54
Issue
3
Start Page
036502
Published Date
2015-01-30
Remark
© 2015 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology