ID 111814
Author
Kawakami, Hiroki Tokushima University
Content Type
Journal Article
Description
Alloying at the metal–semiconductor interface induced by femtosecond laser irradiation associated with thermal annealing was examined to ascertain whether an ohmic contact was formed on silicon carbide (SiC). In general, the electric field of the femtosecond laser beam destroys the crystal structure, but with lower thermal damage around the irradiated areas. In addition to the laser irradiation, we employed thermal annealing to enhance the diffusion of the metal atoms inside the SiC. After these processes, an ohmic contact was successfully formed on the SiC with thermal annealing at a temperature of 900 °C, which is 100 °C lower than with the conventional thermal annealing method.
Journal Title
AIP Advances
ISSN
21583226
Publisher
AIP Publishing
Volume
8
Issue
6
Start Page
065204
Published Date
2018-06-04
Rights
© 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Publisher
departments
Science and Technology