ID 111938
Author
Kitaoka, Makoto Tokushima University
Nagahama, Takuya Tokushima University
Nakamura, Kota Tokushima University
Aritsuki, Takuya Tokushima University
Takashima, Kazuya Tokushima University
Content Type
Journal Article
Description
Carrier doping effects of water vapor and an adsorbed water layer on single-crystal graphene were evaluated. After annealing at 300 °C in nitrogen ambient, the sheet resistance of epitaxial graphene on a SiC substrate had a minimum value of 800 Ω/sq and the carrier density was estimated to be 1.2 × 1013 cm-2 for an n-type dopant. The adsorbed water layer, which acted as a p-type dopant with a carrier density of -7.4 × 1012 cm-2, was formed by deionized (DI) water treatment. The sheet resistances of graphene samples increased with humidity, owing to the counter doping effect. The estimated p-type doping amounts of saturated water vapor were -2.5 × 1012 cm-2 for DI-water-treated graphene and -3.5 × 1012 cm-2 for annealed graphene.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA11509854
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
56
Issue
8
Start Page
085102
Published Date
2017-07-12
Rights
© 2017 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology