ID | 114473 |
Author |
Kajisa, Taira
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Li, Wei
Tokyo Institute of Technology
Michinobu, Tsuyoshi
Tokyo Institute of Technology
Sakata, Toshiya
The University of Tokyo
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Keywords | Catecholamine
Dopamine
Molecularly imprinted polymer
Field-effect transistor
Surface-initiated atom transfer radical polymerization
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Content Type |
Journal Article
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Description | We report a well-designed biointerface enabling the selective and quantitative detection of dopamine (DA) using a potentiometric biosensor. To enhance the detection selectivity of DA, a DA-templated molecularly imprinted polymer (DA–MIP) was synthesized on the extended Au gate electrode of a field-effect transistor (FET) biosensor. For a quantitative DA analysis, the thickness of the DA–MIP was controlled to ca. 60 nm by surface-initiated atom transfer radical polymerization (SI-ATRP). In this process, the DA–MIP was copolymerized with vinylphenylboronic acid (vinyl-PBA), inducing molecular charges at the biointerface of the FET gate electrode. These charges were generated by the diol-binding between PBA and dopamine (a catecholamine), and were directly detected as a change in surface potential. In fact, the surface potential at the gate of the DA–MIP-coated FET responded significantly to DA added at concentrations ranging from 40 nM to μM, whereas that of a non-imprinted polymer (NIP)-coated FET hardly changed over this range. Moreover, by measuring the kinetic parameters and electrochemical properties of well-designed devices with various added catecholamines, we confirmed that the DA–MIP-coated FET biosensor selectively and quantitatively detects DA.
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Journal Title |
Biosensors and Bioelectronics
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ISSN | 09565663
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NCID | AA10739666
AA1152282X
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Publisher | Elsevier
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Volume | 117
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Start Page | 810
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End Page | 817
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Published Date | 2018-07-11
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Rights | © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
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EDB ID | |
DOI (Published Version) | |
URL ( Publisher's Version ) | |
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language |
eng
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TextVersion |
Author
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departments |
Institute of Post-LED Photonics
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