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ID 115744
Author
Murakami, N. Tokushima University
Sugiyama, Y. Tokushima University
Content Type
Journal Article
Description
The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μm was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions.
Journal Title
Japanese Journal of Applied Physics
ISSN
00214922
13474065
NCID
AA12295836
Publisher
The Japan Society of Applied Physics|IOP Publishing
Volume
60
Issue
SC
Start Page
SCCD01
Published Date
2021-02-22
Rights
This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.35848/1347-4065/abe208.
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DOI (Published Version)
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language
eng
TextVersion
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departments
Science and Technology