ID 45513
Title Transcription
ダイ3セダイ トウメイ ドウデンセイ アモルファス ハクマク ノ ソウセイ
Title Alternative
Fabrication of Third-Generation Transparent Conducting Amorphous Oxide Thin Films
Author
Moriga, Toshihiro Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima Tokushima University Educator and Researcher Directory KAKEN Search Researchers
Hayashi, Yukako Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima
Mikawa, Michio Department of Telecommunications, Takuma National College of Technology
Murai, Kei-ichiro Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima Tokushima University Educator and Researcher Directory KAKEN Search Researchers
Tominaga, Kikuo Department of Electric and Electronic Engineering Faculty of Engineering, The University of Tokushima
Keywords
transparent conducting oxides
thin film
amorphous
zinc oxide
indium oxide
tin oxide
sputtering
pulsed laser deposition
Content Type
Departmental Bulletin Paper
Description
Transparent conducting amorphous thin films in the systems of ZnO-In2O3 and ZnO-SnO2 could
be deposited on glass substrates by simultaneous DC magnetron sputtering and/or pulsed laser
deposition techniques. Post-annealing under the reductive gas flow was effective on improving
surface roughness of the amorphous ZnO-In2O3 films deposited by the sputtering method.
Introduction of Ar gas as a background gas into a chamber enabled to deposit flat transparent
conducting amorphous films directly on the substrates by means of the pulsed laser deposition.
Resistivity of amorphous ZnO-SnO2 thin films deposited by the sputtering increased linearly with
an increase of zinc content, until the composition reached Zn2SnO4. The linear decrease in
resistivity was attributable to a linear carrier concentration probably due to that the increased
number of zinc cations occupying the tetrahedral sites in the amorphous structure.
Journal Title
徳島大学工学部研究報告
ISSN
03715949
NCID
AA1221470X
Volume
50
Published Date
2005-03-25
EDB ID
FullText File
language
jpn
departments
Science and Technology