ID 97849
Title Transcription
プラズマ イオン ト シガイ コウセン ノ シナジー コウカ ニヨル ワイド ギャップ ハンドウタイ エッチング ダメージ ノ フルマイ
Title Alternative
Etch Damage Characteristics of Wide Gap Semiconductors due to Synergy Effect of Plasma Ions and UV Lights
Author
Kawakami, Retsuo Institute of Socio-Techno Science Technology, The University of Tokushima Tokushima University Educator and Researcher Directory KAKEN Search Researchers
Keywords
Wide gap semiconductor
Plasma ions
UV lights
Synergy effect
CCP
DBD
JET
Content Type
Departmental Bulletin Paper
Description
Damage characteristics of wide gap semiconductors (n-GaN and TiO2) etched or exposed by low
temperature plasmas have been studied. Morphologies of n-GaN surfaces etched by CCP He plasmas
seem to be similar to that of the as-grown, regardless of gas pressure and etch time, while
morphologies of TiO2 surfaces etched at high gas pressure (7~13 Pa) become rough when the etch
time lengthens. This difference between the two semiconductors would be explained by synergy
effect of He plasmas ions and UV lights (which corresponds to TiO2 band gap energy) emitted. In
contrast, DBD air plasma at 1 kPa and JET He plasma do not cause damage to TiO2: photo-catalytic
properties (hydrophilicities) of TiO2 are more enhanced by these two plasmas.
Journal Title
徳島大学大学院ソシオテクノサイエンス研究部研究報告
ISSN
21859094
NCID
AA12214889
Volume
57
Start Page
9
End Page
16
Sort Key
9
Published Date
2012
FullText File
language
jpn
departments
Science and Technology