| ID | 97849 |
| Title Transcription | プラズマ イオン ト シガイ コウセン ノ シナジー コウカ ニヨル ワイド ギャップ ハンドウタイ エッチング ダメージ ノ フルマイ
|
| Title Alternative | Etch Damage Characteristics of Wide Gap Semiconductors due to Synergy Effect of Plasma Ions and UV Lights
|
| Author |
Kawakami, Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima
Tokushima University Educator and Researcher Directory
KAKEN Search Researchers
|
| Keywords | Wide gap semiconductor
Plasma ions
UV lights
Synergy effect
CCP
DBD
JET
|
| Content Type |
Departmental Bulletin Paper
|
| Description | Damage characteristics of wide gap semiconductors (n-GaN and TiO2) etched or exposed by low
temperature plasmas have been studied. Morphologies of n-GaN surfaces etched by CCP He plasmas seem to be similar to that of the as-grown, regardless of gas pressure and etch time, while morphologies of TiO2 surfaces etched at high gas pressure (7~13 Pa) become rough when the etch time lengthens. This difference between the two semiconductors would be explained by synergy effect of He plasmas ions and UV lights (which corresponds to TiO2 band gap energy) emitted. In contrast, DBD air plasma at 1 kPa and JET He plasma do not cause damage to TiO2: photo-catalytic properties (hydrophilicities) of TiO2 are more enhanced by these two plasmas. |
| Journal Title |
徳島大学大学院ソシオテクノサイエンス研究部研究報告
|
| ISSN | 21859094
|
| NCID | AA12214889
|
| Volume | 57
|
| Start Page | 9
|
| End Page | 16
|
| Sort Key | 9
|
| Published Date | 2012
|
| FullText File | |
| language |
jpn
|
| departments |
Science and Technology
|
