ID | 112167 |
Author |
Takashima, Yuusuke
The University of Tokushima
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Shimizu, Ryo
The University of Tokushima
Haraguchi, Masanobu
The University of Tokushima
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Naoi, Yoshiki
The University of Tokushima
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Content Type |
Journal Article
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Description | We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as s-polarization: p-polarization = 4 : 1 at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire.
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Journal Title |
Japanese Journal of Applied Physics
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ISSN | 13474065
00214922
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NCID | AA12295836
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Publisher | The Japan Society of Applied Physics
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Volume | 53
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Issue | 7
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Start Page | 072101
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Published Date | 2014-06-18
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Rights | © 2014 The Japan Society of Applied Physics
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EDB ID | |
DOI (Published Version) | |
URL ( Publisher's Version ) | |
FullText File | |
language |
eng
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TextVersion |
Author
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departments |
Science and Technology
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