| ID | 111095 |
| Author |
Minami, Yasuo
Tokushima University
Ota, Hiroto
Tokushima University
Kumagai, Naoto
National Institute of Advanced Industrial Science and Technology (AIST)
KAKEN Search Researchers
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| Content Type |
Journal Article
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| Description | Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled cavity structure was fabricated by the direct wafer bonding of (001)- and (113)B-oriented epitaxial wafers for the efficient DFG of two modes in the (113)B side cavity, and two types of InGaAs multiple quantum wells (MQWs) were introduced only in the (001) side cavity as optical gain materials. The threshold behavior was clearly observed in the current–light output curve even at room temperature. Two-color lasing was successfully observed when the gain peaks of MQWs were considerably tuned to the cavity modes by the operating temperature.
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| Journal Title |
Japanese Journal of Applied Physics
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| ISSN | 13474065
00214922
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| NCID | AA12295836
AA11509854
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| Publisher | The Japan Society of Applied Physics
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| Volume | 56
|
| Issue | 4S
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| Start Page | 04CH01
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| Published Date | 2017-02-14
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| Rights | © 2017 The Japan Society of Applied Physics
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| EDB ID | |
| DOI (Published Version) | |
| URL ( Publisher's Version ) | |
| FullText File | |
| language |
eng
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| TextVersion |
Author
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| departments |
Science and Technology
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