Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity

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Use this link to cite this item : https://repo.lib.tokushima-u.ac.jp/113922

ID	113922
Author	Kitada, Takahiro Tokushima University KAKEN Search Researchers Ota, Hiroto Tokushima University Lu, Xiangmeng Tokushima University KAKEN Search Researchers Kumagai, Naoto Tokushima University KAKEN Search Researchers Isu, Toshiro Tokushima University KAKEN Search Researchers
Content Type	Journal Article
Description	Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) multilayers. InGaAs multiple quantum wells (MQWs) with two different well widths were introduced only in the upper cavity, sandwiched between p-type and n-type DBRs. This current-injection type device exhibited two-color lasing in the near-infrared region under room temperature pulsed conditions. This two-color lasing was obtained when the lower cavity had an optimal thickness relative to the upper cavity thickness and the MQW emission properties.
Journal Title	Applied Physics Express
ISSN	18820778 18820786
NCID	AA12295133
Publisher	The Japan Society of Applied Physics
Volume	9
Issue	11
Start Page	111201
Published Date	2016-10-04
Rights	© 2016 The Japan Society of Applied Physics
EDB ID	322253
DOI (Published Version)	10.7567/APEX.9.111201
URL ( Publisher's Version )	https://doi.org/10.7567/APEX.9.111201
FullText File	apex_9_11_111201.pdf 194 KB
language	eng
TextVersion	Author
departments	Science and Technology