| ID | 114980 |
| Author |
Tanaka, Atsushi
Nagoya University|National Institute for Materials Science
Usami, Shigeyoshi
Nagoya University
Kushimoto, Maki
Nagoya University
Deki, Manato
Nagoya University
Nitta, Shugo
Nagoya University
Honda, Yoshio
Nagoya University
Bockowski, Michal
Polish Academy of Sciences
Amano, Hiroshi
Nagoya University|National Institute for Materials Science
|
| Content Type |
Journal Article
|
| Description | In this study, V-shaped dislocations in a GaN epitaxial layer on a free-standing GaN substrate were observed. Our investigation further revealed that the V-shaped dislocations were newly generated at the interface in the epilayer rather than propagated from the GaN substrate. V-shaped dislocations consist of two straight parts. The straight parts of the V-shaped dislocations were separated from each other in the m-direction and tilted toward the step-flow direction of the GaN epitaxial layer. The V-shaped dislocations are continuous single dislocations having a Burgers vector component of 1a and an intrinsic stacking fault between their straight parts.
|
| Journal Title |
AIP Advances
|
| ISSN | 21583226
|
| Publisher | AIP Publishing
|
| Volume | 9
|
| Issue | 9
|
| Start Page | 095002
|
| Published Date | 2019-09-05
|
| Rights | © 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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| EDB ID | |
| DOI (Published Version) | |
| URL ( Publisher's Version ) | |
| FullText File | |
| language |
eng
|
| TextVersion |
Publisher
|
| departments |
Institute of Post-LED Photonics
|
