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ID 115610
Author
Li, Liuan The University of Tokushima
Nakamura, Ryosuke The University of Tokushima
Wang, Qingpeng The University of Tokushima
Jiang, Ying The University of Tokushima
Ao, Jin-Ping The University of Tokushima KAKEN Search Researchers
Keywords
Titanium nitride
Self-aligned gate
AlGaN/GaN heterostructure field-effect transistors
Content Type
Journal Article
Description
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.
Journal Title
Nanoscale Research Letters
ISSN
1556276X
Publisher
Springer Nature
Volume
9
Start Page
590
Published Date
2014-10-28
Rights
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
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DOI (Published Version)
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language
eng
TextVersion
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departments
Science and Technology