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ID 115587
Author
Yin, Yue Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Ren, Fang Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Wang, Yunyu Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Liu, Zhiqiang Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Ao, Jinping The University of Tokushima KAKEN Search Researchers
Liang, Meng Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Wei, Tongbo Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Yuan, Guodong Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Ou, Haiyan Technical University of Denmark
Yan, Jianchang Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Yi, Xiaoyan Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Wang, Junxi Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Li, Jinmin Chinese Academy of Sciences|University of Chinese Academy of Sciences|Beijing Engineering Research Center
Keywords
AlN thin film
WS2
MOCVD
van der Waals epitaxy
Content Type
Journal Article
Description
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.
Journal Title
Materials
ISSN
19961944
Publisher
MDPI
Volume
11
Issue
12
Start Page
2464
Published Date
2018-12-04
Rights
© 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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language
eng
TextVersion
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departments
Science and Technology