ID | 45513 |
Title Transcription | ダイ3セダイ トウメイ ドウデンセイ アモルファス ハクマク ノ ソウセイ
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Title Alternative | Fabrication of Third-Generation Transparent Conducting Amorphous Oxide Thin Films
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Author |
Moriga, Toshihiro
Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima
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Hayashi, Yukako
Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima
Mikawa, Michio
Department of Telecommunications, Takuma National College of Technology
Murai, Kei-ichiro
Department of Chemical Science and Technology, Faculty of Engineering, The University of Tokushima
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Tominaga, Kikuo
Department of Electric and Electronic Engineering Faculty of Engineering, The University of Tokushima
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Keywords | transparent conducting oxides
thin film
amorphous
zinc oxide
indium oxide
tin oxide
sputtering
pulsed laser deposition
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Content Type |
Departmental Bulletin Paper
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Description | Transparent conducting amorphous thin films in the systems of ZnO-In2O3 and ZnO-SnO2 could
be deposited on glass substrates by simultaneous DC magnetron sputtering and/or pulsed laser deposition techniques. Post-annealing under the reductive gas flow was effective on improving surface roughness of the amorphous ZnO-In2O3 films deposited by the sputtering method. Introduction of Ar gas as a background gas into a chamber enabled to deposit flat transparent conducting amorphous films directly on the substrates by means of the pulsed laser deposition. Resistivity of amorphous ZnO-SnO2 thin films deposited by the sputtering increased linearly with an increase of zinc content, until the composition reached Zn2SnO4. The linear decrease in resistivity was attributable to a linear carrier concentration probably due to that the increased number of zinc cations occupying the tetrahedral sites in the amorphous structure. |
Journal Title |
徳島大学工学部研究報告
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ISSN | 03715949
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NCID | AA1221470X
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Volume | 50
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Published Date | 2005-03-25
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EDB ID | |
FullText File | |
language |
jpn
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departments |
Science and Technology
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