Robust hybridization gap in the Kondo insulator YbB12 probed by femtosecond optical spectroscopy

In heavy fermions the relaxation dynamics of photoexcited carriers has been found to be governed by the low energy indirect gap Eg resulting from hybridization between localized moments and conduction band electrons. Here, carrier relaxation dynamics in a prototype Kondo insulator YbB12 is studied over a large range of temperatures and over three orders of magnitude. We utilize the intrinsic nonlinearity of dynamics to quantitatively determine microscopic parameters, such as electron-hole recombination rate. The extracted value reveals that hybridization is accompanied by a strong charge transfer from localized 4 f levels. The results imply the presence of a hybridization gap up to temperatures of the order of Eg/kB ≈ 200 K, which is extremely robust against electronic excitation. Finally, below 20 K the data reveal changes in the low energy electronic structure, attributed to short-range antiferromagnetic correlations between the localized levels.

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