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ID 113920
Title Alternative
Fabrication of two - color surface emitting device of a coupled vertical cavity structure with InAs QDs formed by wafer - bonding
Author
Ota, Hiroto Tokushima University
Content Type
Journal Article
Description
We fabricated the two color surface emitting device of a coupled cavity structure which is applicable to terahertz light source. GaAs/AlGaAs vertical multilayer cavity structures were grown on a (001) and (113)B GaAs substrates and the coupled multilayer cavity structure was fabricated by wafer-bonding of them. The top cavity contains self-assembled InAs quantum dots (QDs) as optical gain materials for two-color emission of cavity-mode lights. The bonding position was optimized for the equivalent intensity of two-color emission. We formed a current injection structure, and two-color emission was observed by current injection, although lasing was not observed.
Journal Title
Japanese Journal of Applied Physics
ISSN
00214922
13474065
NCID
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
55
Issue
4S
Start Page
04EH09
Published Date
2016-03-18
Rights
© 2016 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology