number of access : ?
number of downloads : ?
ID 113921
Author
Murakumo, Keisuke Tokushima University
Yamaoka, Yuya Tokushima University
Content Type
Journal Article
Description
We fabricated a photoconductive antenna structure utilizing Er-doped InAs quantum dot layers embedded in strain-relaxed In0.35Ga0.65As layers on a GaAs substrate. Mesa-shaped electrodes for the antenna structure were formed by photolithography and wet etching in order to suppress its dark current. We measured the photocurrent with the excitation of ~1.5 µm cw and femtosecond pulse lasers. Compared with the dark current, the photocurrent was clearly observed under both cw and pulse excitation conditions and almost linearly increased with increasing excitation power in a wide range of magnitudes from 10 W/cm2 to 10 MW/cm2 order.
Journal Title
Japanese Journal of Applied Physics
ISSN
00214922
13474065
NCID
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
55
Issue
4S
Start Page
04EH12
Published Date
2016-03-23
Rights
© 2016 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology