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ID 117170
Author
Asai, Jun Tokushima University
Bumbrungpon, Mongkol Tokushima University
Tsubochi, Toshiya Tokushima University
Kanaya, Takayuki Tokushima University
Tachii, Masaya Tokushima University
Maeda, Toshiki Tokushima University
Iwamoto, Taku Tokushima University
Kanda, Chika Tokushima University
Keywords
Electrical properties
Thermal conductivity
Hot pressing
Thermoelectric materials
Content Type
Journal Article
Description
The effects of the addition of lead as one of the multiple dopants in p-type Bi0.3−xSb1.7Te3.0+0.01Pbx (x = 0, 0.001, 0.002, 0.003) fabricated by mechanical alloying followed by hot pressing were investigated. Measurements by X-ray diffraction (XRD), differential thermal analysis (DTA), and scanning electron microscopy (SEM) showed the same matrix morphology. The second phase by doped elements was not confirmed by transmission electron microscopy (TEM). By using the lead addition results and previously studied tellurium doping effects, the Lorenz number L was evaluated to be 0.73–1.18 × 10−8 W S−1 K−2. The scattering parameter γ and reduced Fermi energy η were estimated by using expressions on the basis of a one-electron approximation, measured Seebeck coefficients, and the estimated L at room temperature. The γ ranged approximately from −1.06 to −0.60 and showed a mutual effect of acoustic and optical phonon scattering. The relationship between a dimensionless figure of merit ZT and η was clarified. The optimum η was determined as −1.25 at ZT = 1.26. From these results, multi-doped Bi0.3Sb1.7Te3.0 could be applied to evaluate L, γ, and η at a constant temperature.
Journal Title
Ceramics International
ISSN
02728842
NCID
AA10622625
AA11523301
Publisher
Elsevier
Volume
48
Issue
9
Start Page
12520
End Page
12528
Published Date
2022-01-17
Rights
© 2022. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
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DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology