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ID 113925
Author
Kumagai, Naoto National Institute of Advanced Industrial Science and Technology KAKEN Search Researchers
Content Type
Journal Article
Description
GaAs/Ge/GaAs heterostructures were grown on high-index (113)B GaAs substrates by molecular beam epitaxy. Sublattice reversal in GaAs/Ge/GaAs was identified by comparing the anisotropic etching profile of the epitaxial sample with that for reference (113)A and (113)B GaAs substrates. The shape of the resulting mesa for the lower GaAs layer was similar to that for the reference (113)B GaAs substrate, whereas that for the upper GaAs layer was similar to that for the reference (113)A GaAs substrate. An atomic-resolution analysis was also conducted by mapping using energy-dispersive X-ray spectroscopy, whereby the sublattice reversal was directly observed through the atomic arrangements.
Journal Title
Applied Physics Express
ISSN
18820786
18820778
NCID
AA12295133
Publisher
The Japan Society of Applied Physics
Volume
11
Issue
1
Start Page
015501
Published Date
2017-11-30
Rights
© 2018 The Japan Society of Applied Physics
Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license(https://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
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language
eng
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departments
Science and Technology