グラフェン複合物性の機能デバイス化技術の研究

This study describes formation and evaluation techniques of graphene on SiC for new functional devices using composite properties. A new layer number determination technique for graphene on SiC was established using microscopic Raman spectroscopy. Growth mechanism of graphene was revealed by detailed image analysis of scanning probe microscopy (SPM). Highly uniform single-layer single-crystal graphene was successfully grown on SiC substrate of 10 mm-sq size. New methods for mechanical and electrical properties of graphene were also developed. Friction force of graphene on SiC was evaluated using friction force microscopy. Contact conductance properties were measured using conductive nanoprobes on SPM.