ID 105974
Title Transcription
グラフェン フクゴウ ブッセイ ノ キノウ デバイスカ ギジュツ ノ ケンキュウ
Title Alternative
Study on Graphene Composite Properties for New Functional Devices
Author
Nagase, Masao Institute of Technology and Science, The University of Tokushima Tokushima University Educator and Researcher Directory KAKEN Search Researchers
Keywords
Graphene
SiC
Raman spectroscopy
Scanning probe microscopy
Content Type
Departmental Bulletin Paper
Description
This study describes formation and evaluation techniques of graphene on SiC for new functional devices using composite properties. A new layer number determination technique for graphene on SiC was established using microscopic Raman spectroscopy. Growth mechanism of graphene was revealed by detailed image analysis of scanning probe microscopy (SPM). Highly uniform single-layer single-crystal graphene was successfully grown on SiC substrate of 10 mm-sq size. New methods for mechanical and electrical properties of graphene were also developed. Friction force of graphene on SiC was evaluated using friction force microscopy. Contact conductance properties were measured using conductive nanoprobes on SPM.
Journal Title
徳島大学大学院ソシオテクノサイエンス研究部研究報告
ISSN
21859094
NCID
AA12214889
Volume
58
Start Page
13
End Page
21
Sort Key
13
Published Date
2013
EDB ID
FullText File
language
jpn
TextVersion
Publisher
departments
Science and Technology