ID 110898
Author
O, Ryong-Sok The University of Tokushima
Iwamoto, Atsushi The University of Tokushima
Nishi, Yuki The University of Tokushima
Funase, Yuya The University of Tokushima
Yuasa, Takahiro The University of Tokushima
Hibino, Hiroki NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Yamaguchi, Hiroshi NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Content Type
Journal Article
Description
We propose a quality control method for wafer-scale epitaxial graphene grown on SiC substrates. The peak position of Raman spectra of epitaxial graphene is an excellent indicator of film quality and reveals irregularities, such as graphene thickness inhomogeneity and SiC substrate defects. A comparison of microscopic Raman maps and scanning probe microscopy images of the same position of the sample revealed that wave numbers of Raman peaks (G and 2D band peaks) were strongly correlated with the strain in the graphene film. The increase in number of graphene layers (2 to 3–4 layers) induced phonon softening (~6 cm-1) and broadening (~6 cm-1) of the 2D band peak. Significant phonon softening and abnormal broadening of the Raman peaks were observed at residual scratches on the SiC substrate. The quantitative layer number distribution of graphene on SiC is successfully estimated from the wave number distribution of the 2D band peak.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA11509854
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
51
Issue
6S
Start Page
06FD06
Sort Key
06FD06
Published Date
2012-06-20
Remark
© 2012 The Japan Society of Applied Physics
EDB ID
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology