ID 111095
Author
Ota, Hiroto Tokushima University
Kumagai, Naoto National Institute of Advanced Industrial Science and Technology (AIST) KAKEN Search Researchers
Content Type
Journal Article
Description
Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled cavity structure was fabricated by the direct wafer bonding of (001)- and (113)B-oriented epitaxial wafers for the efficient DFG of two modes in the (113)B side cavity, and two types of InGaAs multiple quantum wells (MQWs) were introduced only in the (001) side cavity as optical gain materials. The threshold behavior was clearly observed in the current–light output curve even at room temperature. Two-color lasing was successfully observed when the gain peaks of MQWs were considerably tuned to the cavity modes by the operating temperature.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA12295836
AA11509854
Publisher
The Japan Society of Applied Physics
Volume
56
Issue
4S
Start Page
04CH01
Published Date
2017-02-14
Rights
© 2017 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology