ID 111095
著者
Ota, Hiroto Tokushima University
熊谷, 直人 National Institute of Advanced Industrial Science and Technology (AIST) KAKEN研究者をさがす
資料タイプ
学術雑誌論文
抄録
Current-injection two-color lasing has been demonstrated using a GaAs/AlGaAs coupled multilayer cavity that is a good candidate for novel terahertz-emitting devices based on difference-frequency generation (DFG) inside the structure. The coupled cavity structure was fabricated by the direct wafer bonding of (001)- and (113)B-oriented epitaxial wafers for the efficient DFG of two modes in the (113)B side cavity, and two types of InGaAs multiple quantum wells (MQWs) were introduced only in the (001) side cavity as optical gain materials. The threshold behavior was clearly observed in the current–light output curve even at room temperature. Two-color lasing was successfully observed when the gain peaks of MQWs were considerably tuned to the cavity modes by the operating temperature.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA12295836
AA11509854
出版者
The Japan Society of Applied Physics
56
4S
開始ページ
04CH01
発行日
2017-02-14
権利情報
© 2017 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系