ID 112167
Author
Shimizu, Ryo The University of Tokushima
Content Type
Journal Article
Description
We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as s-polarization: p-polarization = 4 : 1 at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA12295836
Publisher
The Japan Society of Applied Physics
Volume
53
Issue
7
Start Page
072101
Published Date
2014-06-18
Rights
© 2014 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology