ID 112167
著者
Shimizu, Ryo The University of Tokushima
資料タイプ
学術雑誌論文
抄録
We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as s-polarization: p-polarization = 4 : 1 at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA12295836
出版者
The Japan Society of Applied Physics
53
7
開始ページ
072101
発行日
2014-06-18
権利情報
© 2014 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系