ID 112169
Author
Tanabe, Masato Tokushima University
Keywords
Polarization
Subwavelength
Ultraviolet
Light-emitting diode
Nitride
Content Type
Journal Article
Description
The polarization characteristics of a 370 nm GaN-based ultraviolet light-emitting diode (UV-LED) were controlled by a subwavelength grating (SWG) on a low-refractive-index SiO2 underlayer inserted between the SWG and LED surface. Highly polarized UV emission was demonstrated by utilizing the Bloch eigenmode resonance in the SWG structure for the two orthogonal polarization states. The polarization ratio of the emission reached 16:1, which is the highest reported to date for direct emission from a GaN-based UV-LED. The decrease in UV emission was also prevented by suppressing the diffracted plane wave and by increasing the amplitude of the wave incident onto the SWG structure; this increase was achieved by taking advantage of the low refractive index of SiO2.
Journal Title
Optics Communications
ISSN
00304018
NCID
AA00764805
AA11535730
Publisher
Elsevier
Volume
369
Start Page
38
End Page
43
Published Date
2016-02-20
Rights
© 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology