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ID 112169
著者
Tanabe, Masato Tokushima University
キーワード
Polarization
Subwavelength
Ultraviolet
Light-emitting diode
Nitride
資料タイプ
学術雑誌論文
抄録
The polarization characteristics of a 370 nm GaN-based ultraviolet light-emitting diode (UV-LED) were controlled by a subwavelength grating (SWG) on a low-refractive-index SiO2 underlayer inserted between the SWG and LED surface. Highly polarized UV emission was demonstrated by utilizing the Bloch eigenmode resonance in the SWG structure for the two orthogonal polarization states. The polarization ratio of the emission reached 16:1, which is the highest reported to date for direct emission from a GaN-based UV-LED. The decrease in UV emission was also prevented by suppressing the diffracted plane wave and by increasing the amplitude of the wave incident onto the SWG structure; this increase was achieved by taking advantage of the low refractive index of SiO2.
掲載誌名
Optics Communications
ISSN
00304018
cat書誌ID
AA00764805
AA11535730
出版者
Elsevier
369
開始ページ
38
終了ページ
43
発行日
2016-02-20
権利情報
© 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系