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ID 113469
Author
Du, Jiyao Tokushima University
Kimura, Yukinobu Tokushima University
Tahara, Masaaki Tokushima University
Matsui, Kazushi Tokushima University
Teratani, Hitoshi Tokushima University
Content Type
Journal Article
Description
We report a vertically stacked graphene tunnel junction with an atomically thin insulating layer for novel function devices. The insulating water layer sandwiched between graphene samples as a tunnel barrier which is fabricated through deionized (DI) water treatment of epitaxial graphene. Two graphene samples fabricated by SiC thermal decomposition are directly bonded to each other in a face-to-face manner. Vertically stacked graphene samples without DI water treated formed an ohmic junction. By inserting the structured water layer as tunnel barrier, the stacked junction exhibits Direct tunneling (DT) characteristics in a low-electric-field regime and Fowler-Nordheim tunneling (FNT) characteristics in a high-electric-field regime. The thickness of the structured water layer is estimated to be 0.28 nm by fitting the FNT formula. The very thin structured water layer is stable as tunnel barrier on epitaxial graphene for diode devices, which will have a widely application in electronic devices.
Journal Title
Japanese Journal of Applied Physics
ISSN
13474065
00214922
NCID
AA12295836
AA11509854
Publisher
The Japan Society of Applied Physics
Volume
58
Issue
SD
Start Page
SDDE01
Published Date
2019-04-25
Rights
© 2019 The Japan Society of Applied Physics
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology