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ID 113469
著者
Du, Jiyao Tokushima University
Kimura, Yukinobu Tokushima University
Tahara, Masaaki Tokushima University
Matsui, Kazushi Tokushima University
Teratani, Hitoshi Tokushima University
資料タイプ
学術雑誌論文
抄録
We report a vertically stacked graphene tunnel junction with an atomically thin insulating layer for novel function devices. The insulating water layer sandwiched between graphene samples as a tunnel barrier which is fabricated through deionized (DI) water treatment of epitaxial graphene. Two graphene samples fabricated by SiC thermal decomposition are directly bonded to each other in a face-to-face manner. Vertically stacked graphene samples without DI water treated formed an ohmic junction. By inserting the structured water layer as tunnel barrier, the stacked junction exhibits Direct tunneling (DT) characteristics in a low-electric-field regime and Fowler-Nordheim tunneling (FNT) characteristics in a high-electric-field regime. The thickness of the structured water layer is estimated to be 0.28 nm by fitting the FNT formula. The very thin structured water layer is stable as tunnel barrier on epitaxial graphene for diode devices, which will have a widely application in electronic devices.
掲載誌名
Japanese Journal of Applied Physics
ISSN
13474065
00214922
cat書誌ID
AA12295836
AA11509854
出版者
The Japan Society of Applied Physics
58
SD
開始ページ
SDDE01
発行日
2019-04-25
権利情報
© 2019 The Japan Society of Applied Physics
EDB ID
出版社版DOI
出版社版URL
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言語
eng
著者版フラグ
著者版
部局
理工学系