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ID 115528
Author
Sugimoto, Kozo Shibaura Institute of Technology
Matsuo, Shigeki Shibaura Institute of Technology KAKEN Search Researchers
Content Type
Journal Article
Description
Using focused subnanosecond laser pulses at 1.064μm wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside 300μm-thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.
Journal Title
Scientific Reports
ISSN
20452322
Publisher
Springer Nature
Volume
10
Start Page
21451
Published Date
2020-12-08
Rights
This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
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language
eng
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departments
Science and Technology