アクセス数 : ?
ダウンロード数 : ?
ID 115528
著者
Sugimoto, Kozo Shibaura Institute of Technology
松尾, 繁樹 Shibaura Institute of Technology KAKEN研究者をさがす
資料タイプ
学術雑誌論文
抄録
Using focused subnanosecond laser pulses at 1.064μm wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside 300μm-thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.
掲載誌名
Scientific Reports
ISSN
20452322
出版者
Springer Nature
10
開始ページ
21451
発行日
2020-12-08
権利情報
This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
出版社版
部局
理工学系