ID | 118217 |
Author |
Tomita, Takuro
Tokushima University
Tokushima University Educator and Researcher Directory
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Bando, Yota
Tokushima University
Takenaka, Kazumasa
Tokushima University
Tanaka, Yasuhiro
Kagawa University
Yamaguchi, Makoto
Akita University
Nakashima, Shin-ichi
Tokushima University
Okada, Tatsuya
Tokushima University
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Keywords | Raman intensity
Polarity dependence
Silicon carbide
Ultrathin crystal
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Content Type |
Journal Article
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Description | The surface-polarity-dependent Raman spectra of ultrathin silicon carbide crystal are reported. The relative Raman intensity of the folded-transverse-acoustic phonon to the folded-transverse-optical phonon modes differs drastically between silicon-terminated face (Si-face) and carbon-terminated face (C-face) only for sample thickness below 150 nm. For samples thicker than 150 nm, the relative Raman intensity ratio takes an almost constant value for both Si- and C-faces. These results indicate that the phonon modes confined in the near-surface region are the possible origin of the observed surface-polarity-dependent Raman spectra.
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Journal Title |
Applied Physics A: Materials Science & Processing
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ISSN | 09478396
14320630
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NCID | AA11038055
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Publisher | Springer Nature
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Volume | 129
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Issue | 6
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Start Page | 420
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Published Date | 2023-05-15
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Remark | This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use (https://www.springernature.com/gp/open-research/policies/accepted-manuscript-terms), but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s00339-023-06689-9
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DOI (Published Version) | |
URL ( Publisher's Version ) | |
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language |
eng
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TextVersion |
Author
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departments |
Science and Technology
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