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ID 118217
Author
Bando, Yota Tokushima University
Takenaka, Kazumasa Tokushima University
Tanaka, Yasuhiro Kagawa University
Yamaguchi, Makoto Akita University
Nakashima, Shin-ichi Tokushima University
Keywords
Raman intensity
Polarity dependence
Silicon carbide
Ultrathin crystal
Content Type
Journal Article
Description
The surface-polarity-dependent Raman spectra of ultrathin silicon carbide crystal are reported. The relative Raman intensity of the folded-transverse-acoustic phonon to the folded-transverse-optical phonon modes differs drastically between silicon-terminated face (Si-face) and carbon-terminated face (C-face) only for sample thickness below 150 nm. For samples thicker than 150 nm, the relative Raman intensity ratio takes an almost constant value for both Si- and C-faces. These results indicate that the phonon modes confined in the near-surface region are the possible origin of the observed surface-polarity-dependent Raman spectra.
Journal Title
Applied Physics A: Materials Science & Processing
ISSN
09478396
14320630
NCID
AA11038055
Publisher
Springer Nature
Volume
129
Issue
6
Start Page
420
Published Date
2023-05-15
Remark
This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use (https://www.springernature.com/gp/open-research/policies/accepted-manuscript-terms), but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s00339-023-06689-9
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DOI (Published Version)
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language
eng
TextVersion
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departments
Science and Technology