ID | 118217 |
著者 |
Bando, Yota
Tokushima University
Takenaka, Kazumasa
Tokushima University
Tanaka, Yasuhiro
Kagawa University
Yamaguchi, Makoto
Akita University
Nakashima, Shin-ichi
Tokushima University
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キーワード | Raman intensity
Polarity dependence
Silicon carbide
Ultrathin crystal
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資料タイプ |
学術雑誌論文
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抄録 | The surface-polarity-dependent Raman spectra of ultrathin silicon carbide crystal are reported. The relative Raman intensity of the folded-transverse-acoustic phonon to the folded-transverse-optical phonon modes differs drastically between silicon-terminated face (Si-face) and carbon-terminated face (C-face) only for sample thickness below 150 nm. For samples thicker than 150 nm, the relative Raman intensity ratio takes an almost constant value for both Si- and C-faces. These results indicate that the phonon modes confined in the near-surface region are the possible origin of the observed surface-polarity-dependent Raman spectra.
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掲載誌名 |
Applied Physics A: Materials Science & Processing
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ISSN | 09478396
14320630
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cat書誌ID | AA11038055
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出版者 | Springer Nature
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巻 | 129
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号 | 6
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開始ページ | 420
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発行日 | 2023-05-15
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備考 | This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use (https://www.springernature.com/gp/open-research/policies/accepted-manuscript-terms), but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: https://doi.org/10.1007/s00339-023-06689-9
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言語 |
eng
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著者版フラグ |
著者版
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部局 |
理工学系
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