ID | 118406 |
Author |
Sonoi, Shuhei
Toyohashi University of Technology
Katamawari, Riku
Toyohashi University of Technology
Shimokawa, Manami
Toyohashi University of Technology
Inaba, Kyosuke
Toyohashi University of Technology
Piedra-Lorenzana, Jose A.
Toyohashi University of Technology
Hizawa, Takeshi
Toyohashi University of Technology
Fujikata, Junichi
Photonics Electronics Technology Research Association|Tokushima University
Tokushima University Educator and Researcher Directory
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Ishikawa, Yasuhiko
Toyohashi University of Technology
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Keywords | Band engineering
germanium
intensity modulation
photodetectors
silicon photonics
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Content Type |
Journal Article
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Description | This study reports the bandgap engineering of a Ge epitaxial layer on Si to tune the operating wavelength of optical intensity modulators and photodetectors in the C (1.530–1.565μm)+L (1.565–1.625 μm) band. A strip structure of elemental Ge is investigated, rather than wider-gap SiGe or narrower-gap GeSn alloy, to achieve the key property of a C band modulation and improved L band detection. By narrowing the strip to the submicron scale, a tensile lattice strain in Ge, induced by a thermal expansion mismatch with Si, is elastically relaxed by an edge-induced relaxation effect. The photoluminescence peak and photodetection spectra show a significant blue shift as the narrowed direct gap of ~0.77 eV is restored to 0.80 eV of unstrained Ge. A standard SiNx external stressor on a narrow Ge strip induces an increased blue shift or an opposite red shift, depending on the stress polarity in SiNx. The results show that it is possible to tune the operating wavelength of modulators and photodetectors of elemental Ge in the C+L band.
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Journal Title |
IEEE Journal of Quantum Electronics
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ISSN | 00189197
15581713
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NCID | AA00667423
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Publisher | IEEE
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Volume | 58
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Issue | 5
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Start Page | 8400209
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Published Date | 2022-08-31
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Rights | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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DOI (Published Version) | |
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language |
eng
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TextVersion |
Author
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departments |
Science and Technology
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