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ID 118406
著者
Sonoi, Shuhei Toyohashi University of Technology
Katamawari, Riku Toyohashi University of Technology
Shimokawa, Manami Toyohashi University of Technology
Inaba, Kyosuke Toyohashi University of Technology
Piedra-Lorenzana, Jose A. Toyohashi University of Technology
Hizawa, Takeshi Toyohashi University of Technology
藤方, 潤一 Photonics Electronics Technology Research Association|Tokushima University 徳島大学 教育研究者総覧 KAKEN研究者をさがす
Ishikawa, Yasuhiko Toyohashi University of Technology
キーワード
Band engineering
germanium
intensity modulation
photodetectors
silicon photonics
資料タイプ
学術雑誌論文
抄録
This study reports the bandgap engineering of a Ge epitaxial layer on Si to tune the operating wavelength of optical intensity modulators and photodetectors in the C (1.530–1.565μm)+L (1.565–1.625 μm) band. A strip structure of elemental Ge is investigated, rather than wider-gap SiGe or narrower-gap GeSn alloy, to achieve the key property of a C band modulation and improved L band detection. By narrowing the strip to the submicron scale, a tensile lattice strain in Ge, induced by a thermal expansion mismatch with Si, is elastically relaxed by an edge-induced relaxation effect. The photoluminescence peak and photodetection spectra show a significant blue shift as the narrowed direct gap of ~0.77 eV is restored to 0.80 eV of unstrained Ge. A standard SiNx external stressor on a narrow Ge strip induces an increased blue shift or an opposite red shift, depending on the stress polarity in SiNx. The results show that it is possible to tune the operating wavelength of modulators and photodetectors of elemental Ge in the C+L band.
掲載誌名
IEEE Journal of Quantum Electronics
ISSN
00189197
15581713
cat書誌ID
AA00667423
出版者
IEEE
58
5
開始ページ
8400209
発行日
2022-08-31
権利情報
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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フルテキストファイル
言語
eng
著者版フラグ
著者版
部局
理工学系