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ID 118600
Author
Kawano, Taiyoh Tokushima University
Furuichi, Taketo Tokushima University
Tsuchiya, Eibon University of Tokyo
Yamaguchi, Makoto Akita University
Kobayashi, Yohei University of Tokyo
Keywords
high-entropy alloys (HEAs)
Fe/Cr/Ni thin films
ultra-short pulsed laser irradiation
pulse-duration-dependence
scanning transmission electron microscopy (STEM)
element maps
Content Type
Journal Article
Description
We examined the possibility of suppressing elemental segregation of high-entropy alloys (HEAs) using femtosecond laser irradiation. Thin films of iron (Fe), chromium (Cr), and nickel (Ni) were deposited on the surfaces of n-type SiC and p-type GaN substrates. The thicknesses of the Fe, Cr, and Ni films were 12, 7, and 11 nm, respectively. Laser irradiation was performed from the substrate side by focusing on the interface between the Fe film and substrate. Scanning transmission electron microscopy (STEM) bright-field images superimposed on the elemental maps of Fe, Cr, and Ni showed a more homogenous mixing of Fe, Cr, and Ni in the femtosecond-laser-modified region than in the picosecond-laser-modified region. In particular, the Ni distribution showed a significant improvement in homogeneity. In other words, the Ni mixture was more homogeneous in the femtosecond laser-modified region than in the picosecond laser-modified region. Although the duration of the picosecond laser pulse was sufficiently long for atomic diffusion, segregation still occurred during the cooling process following laser irradiation.
Journal Title
Journal of Laser Micro/Nanoengineering
ISSN
18800688
Publisher
Japan Laser Processing Society
Volume
18
Issue
2
Start Page
100
End Page
104
Published Date
2023-09
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Publisher
departments
Science and Technology