ID | 118600 |
著者 |
Kawano, Taiyoh
Tokushima University
Furuichi, Taketo
Tokushima University
Tsuchiya, Eibon
University of Tokyo
Yamaguchi, Makoto
Akita University
Kobayashi, Yohei
University of Tokyo
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キーワード | high-entropy alloys (HEAs)
Fe/Cr/Ni thin films
ultra-short pulsed laser irradiation
pulse-duration-dependence
scanning transmission electron microscopy (STEM)
element maps
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資料タイプ |
学術雑誌論文
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抄録 | We examined the possibility of suppressing elemental segregation of high-entropy alloys (HEAs) using femtosecond laser irradiation. Thin films of iron (Fe), chromium (Cr), and nickel (Ni) were deposited on the surfaces of n-type SiC and p-type GaN substrates. The thicknesses of the Fe, Cr, and Ni films were 12, 7, and 11 nm, respectively. Laser irradiation was performed from the substrate side by focusing on the interface between the Fe film and substrate. Scanning transmission electron microscopy (STEM) bright-field images superimposed on the elemental maps of Fe, Cr, and Ni showed a more homogenous mixing of Fe, Cr, and Ni in the femtosecond-laser-modified region than in the picosecond-laser-modified region. In particular, the Ni distribution showed a significant improvement in homogeneity. In other words, the Ni mixture was more homogeneous in the femtosecond laser-modified region than in the picosecond laser-modified region. Although the duration of the picosecond laser pulse was sufficiently long for atomic diffusion, segregation still occurred during the cooling process following laser irradiation.
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掲載誌名 |
Journal of Laser Micro/Nanoengineering
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ISSN | 18800688
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出版者 | Japan Laser Processing Society
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巻 | 18
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号 | 2
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開始ページ | 100
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終了ページ | 104
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発行日 | 2023-09
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EDB ID | |
出版社版DOI | |
出版社版URL | |
フルテキストファイル | |
言語 |
eng
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著者版フラグ |
出版社版
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部局 |
理工学系
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