| ID | 110896 |
| Author |
O, Ryong-Sok
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation|University of Tokushima
Takamura, Makoto
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Furukawa, Kazuaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Nagase, Masao
University of Tokushima
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Hibino, Hiroki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
|
| Content Type |
Journal Article
|
| Description | We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5µm/h under UV light irradiation in 1wt% KOH at a constant current of 0.5mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.
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| Journal Title |
Japanese Journal of Applied Physics
|
| ISSN | 13474065
00214922
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| NCID | AA11509854
AA12295836
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| Publisher | The Japan Society of Applied Physics
|
| Volume | 54
|
| Issue | 3
|
| Start Page | 036502
|
| Published Date | 2015-01-30
|
| Remark | © 2015 The Japan Society of Applied Physics
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| EDB ID | |
| DOI (Published Version) | |
| URL ( Publisher's Version ) | |
| FullText File | |
| language |
eng
|
| TextVersion |
Author
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| departments |
Science and Technology
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