| ID | 110896 |
| 著者 |
O, Ryong-Sok
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation|University of Tokushima
Takamura, Makoto
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Furukawa, Kazuaki
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
日比野, 浩樹
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
|
| 資料タイプ |
学術雑誌論文
|
| 抄録 | We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5µm/h under UV light irradiation in 1wt% KOH at a constant current of 0.5mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.
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| 掲載誌名 |
Japanese Journal of Applied Physics
|
| ISSN | 13474065
00214922
|
| cat書誌ID | AA11509854
AA12295836
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| 出版者 | The Japan Society of Applied Physics
|
| 巻 | 54
|
| 号 | 3
|
| 開始ページ | 036502
|
| 発行日 | 2015-01-30
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| 備考 | © 2015 The Japan Society of Applied Physics
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| EDB ID | |
| 出版社版DOI | |
| 出版社版URL | |
| フルテキストファイル | |
| 言語 |
eng
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| 著者版フラグ |
著者版
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| 部局 |
理工学系
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