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ID 113928
Author
Keywords
A3. Molecular beam epitaxy
A1. Sublattice reversal
B2. GaAs/Ge/GaAs
B2. AlAs/Ge/AlAs
A1. Heterostructures
B2. (1 1 3)A and (1 1 3)B GaAs
Content Type
Journal Article
Description
GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures were grown both on (113)B and (113)A GaAs substrates by molecular beam epitaxy. Sublattice reversal in these heterostructures were identified by comparing the anisotropic etching profile of the epitaxy sample with that for reference (113)B and (113)A GaAs substrates. Sublattice reversal in GaAs/Ge/GaAs heterostructures was achieved on (113)B GaAs substrate. On the other hand, sublattice reversal on (113)A GaAs substrate was obtained by using AlAs/Ge/AlAs heterostructures.
Journal Title
Journal of Crystal Growth
ISSN
00220248
NCID
AA00696341
AA11531784
Publisher
Elsevier
Volume
512
Start Page
74
End Page
77
Published Date
2019-02-06
Rights
© 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
EDB ID
DOI (Published Version)
URL ( Publisher's Version )
FullText File
language
eng
TextVersion
Author
departments
Science and Technology