Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate

Two types of vertically stacked graphene junction diodes were fabricated in this study. Samples of single-crystal graphene measuring 100 mm2 were epitaxially grown on SiC substrate using the thermal decomposition method and were bonded using the direct bonding technique. The direct-bonded stacked junction diode exhibited nonlinear current-voltage characteristics and acted as a far-infrared emitter. Fowler-Nordheim tunneling phenomena with a strong nonlinear behavior was observed in the tunneling diode with a thin insulative layer (air gap or structured water). By using simple device-assembly processes, vertically stacked graphene diodes with new functions were successfully fabricated.

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