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ID 116404
著者
資料タイプ
学術雑誌論文
抄録
Two types of vertically stacked graphene junction diodes were fabricated in this study. Samples of single-crystal graphene measuring 100 mm2 were epitaxially grown on SiC substrate using the thermal decomposition method and were bonded using the direct bonding technique. The direct-bonded stacked junction diode exhibited nonlinear current-voltage characteristics and acted as a far-infrared emitter. Fowler-Nordheim tunneling phenomena with a strong nonlinear behavior was observed in the tunneling diode with a thin insulative layer (air gap or structured water). By using simple device-assembly processes, vertically stacked graphene diodes with new functions were successfully fabricated.
掲載誌名
ECS Transactions
ISSN
19385862
19386737
cat書誌ID
AA12163777
出版者
IOP Publishing|The Electrochemical Society
104
4
開始ページ
27
終了ページ
31
発行日
2021
権利情報
This is the version of the article before peer review or editing, as submitted by an author to ECS Transactions.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.1149/10404.0027ecst.
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出版社版DOI
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言語
eng
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著者版
部局
理工学系