ID | 119235 |
タイトル別表記 | Si PHOTONIC-INTEGRATED CHIP ASSEMBLY WITH WAVEGUIDE Ge AVALANCHE PHOTODIODE
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著者 |
Ono, Hideki
Oki Electric Industry Company|Photonics Electronics Technology Research Association
Noguchi, Masataka
NEC Corporation|Photonics Electronics Technology Research Association
Takahashi, Hiroyuki
Oki Electric Industry Company|Photonics Electronics Technology Research Association
Itoh, Masanori
Oki Electric Industry Company
Shimura, Daisuke
Oki Electric Industry Company|Photonics Electronics Technology Research Association
Yaegashi, Hiroki
Oki Electric Industry Company|Photonics Electronics Technology Research Association
Sasaki, Hironori
Oki Electric Industry Company|Photonics Electronics Technology Research Association
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キーワード | Avalanche photodiodes
optical access networks
silicon photonics
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資料タイプ |
学術雑誌論文
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抄録 | The receiving characteristics of the silicon photonic-integrated chip assembly consisting of transimpedance amplifiers and butt-joint waveguide germanium avalanche photodiodes with lateral separated absorption and multiplication (SAM) structures were demonstrated based on conventional complementary metal-oxide-semiconductor processes. We experimentally verified a clear open eye diagram at 10 Gbps with a reverse bias of 17 V. Receiving sensitivities of −22.8 dBm and −22.0 dBm were obtained for the best and worst polarizations, respectively, with optical signals that had wavelengths longer than those of the absorption edges of Ge at a bit rate of 10 Gbps and a wavelength of 1600 nm. The proposed waveguide butt-joint germanium avalanche photodiodes with lateral SAM structures can be used to receive long wavelengths of downstream signals with low polarization dependence in next-generation optical access network systems.
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掲載誌名 |
IEEE Photonics Journal
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ISSN | 19430655
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出版者 | IEEE
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巻 | 14
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号 | 5
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開始ページ | 6849808
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発行日 | 2022-09-01
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権利情報 | This work is licensed under a Creative Commons Attribution 4.0 License.
For more information, see https://creativecommons.org/licenses/by/4.0/ |
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言語 |
eng
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出版社版
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部局 |
理工学系
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