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Si PHOTONIC-INTEGRATED CHIP ASSEMBLY WITH WAVEGUIDE Ge AVALANCHE PHOTODIODE
著者
Ono, Hideki Oki Electric Industry Company|Photonics Electronics Technology Research Association
Noguchi, Masataka NEC Corporation|Photonics Electronics Technology Research Association
Takahashi, Hiroyuki Oki Electric Industry Company|Photonics Electronics Technology Research Association
Itoh, Masanori Oki Electric Industry Company
Shimura, Daisuke Oki Electric Industry Company|Photonics Electronics Technology Research Association
Yaegashi, Hiroki Oki Electric Industry Company|Photonics Electronics Technology Research Association
Sasaki, Hironori Oki Electric Industry Company|Photonics Electronics Technology Research Association
キーワード
Avalanche photodiodes
optical access networks
silicon photonics
資料タイプ
学術雑誌論文
抄録
The receiving characteristics of the silicon photonic-integrated chip assembly consisting of transimpedance amplifiers and butt-joint waveguide germanium avalanche photodiodes with lateral separated absorption and multiplication (SAM) structures were demonstrated based on conventional complementary metal-oxide-semiconductor processes. We experimentally verified a clear open eye diagram at 10 Gbps with a reverse bias of 17 V. Receiving sensitivities of −22.8 dBm and −22.0 dBm were obtained for the best and worst polarizations, respectively, with optical signals that had wavelengths longer than those of the absorption edges of Ge at a bit rate of 10 Gbps and a wavelength of 1600 nm. The proposed waveguide butt-joint germanium avalanche photodiodes with lateral SAM structures can be used to receive long wavelengths of downstream signals with low polarization dependence in next-generation optical access network systems.
掲載誌名
IEEE Photonics Journal
ISSN
19430655
出版者
IEEE
14
5
開始ページ
6849808
発行日
2022-09-01
権利情報
This work is licensed under a Creative Commons Attribution 4.0 License.
For more information, see https://creativecommons.org/licenses/by/4.0/
EDB ID
出版社版DOI
出版社版URL
フルテキストファイル
言語
eng
著者版フラグ
出版社版
部局
理工学系